IRF7469TRPBF International Rectifier, IRF7469TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7469TRPBF
• Description: MOSFET N-CH 40V 9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7469TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2000pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 9 A
• Gate Charge, Total: 15 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 12 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 14 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 0.8 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 21 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7469PBFTR; IRF7469TRPBF; IRF7469TRPBFTR

Avalanche Characteristics
Diode Characteristics
Dynamic @ T
IRF7469PbF
Static @ T
Symbol
E
I
V
Symbol
I
I
t
Q
t
Q
V
∆V
R
V
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
I
AR
SM
I
S
rr
rr
d(on)
r
d(off)
f
DSS
GSS
AS
fs
SD
(BR)DSS
GS(th)
iss
oss
rss
DS(on)
g
gs
gd
oss
rr
rr
2
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Diode Forward Voltage
Static Drain-to-Source On-Resistance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
17
–––
–––
––– 0.80
––– 0.65 –––
–––
–––
–––
–––
40
0.04
2000 –––
15.5
–––
–––
150
–––
480
–––
–––
–––
–––
–––
––– -200
7.0
5.0
2.2
3.5
15
16
11
14
28
47
91
77
12
–––
140
230
–––
–––
–––
–––
–––
–––
–––
120
–––
100
200
8.0
1.3
3.0
71
23
11
24
2.3
20
17
21
73
V/°C
nC
nC
nC
µA
nA
ns
pF
ns
ns
mΩ
S
V
V
V
Typ.
–––
–––
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
Reference to 25°C, I
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
V
V
V
V
V
D
D
J
J
J
J
DS
DS
GS
GS
DD
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
GS
G
= 7.2A
= 7.2A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8Ω
= 20V
= 20V
= V
= 32V, V
= 32V, V
= 20V, I
= 4.5V
= 0V, V
= 20V
= 4.5V
= 0V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
GS
, I
D
S
F
ƒ
ƒ
DS
D
D
D
Conditions
S
F
= 250µA
D
GS
GS
Conditions
Conditions
= 7.2A, V
= 7.2A, V
= 250µA
= 7.2A
= 9.0A
= 7.2A, V
= 7.2A, V
= 7.2A
= 16V
Max.
210
= 0V, T
7.2
= 0V
ƒ
ƒ
D
www.irf.com
= 1mA
GS
R
ƒ
J
ƒ
=15V
GS
R
= 125°C
=20V
G
= 0V
= 0V
Units
mJ
A
ƒ
ƒ
D
S