IRF7469TRPBF International Rectifier, IRF7469TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7469TRPBF
• Description: MOSFET N-CH 40V 9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7469TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2000pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 9 A
• Gate Charge, Total: 15 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 12 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 14 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 0.8 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 21 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7469PBFTR; IRF7469TRPBF; IRF7469TRPBFTR

IRF7469PbF
100000
10000
4
1000
100
10
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
1
Fig 7. Typical Source-Drain Diode
0.4
Drain-to-Source Voltage
T = 150 C
J
V DS , Drain-to-Source Voltage (V)
V
SD
Forward Voltage
0.8
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25 C
J
Crss
Coss
Ciss
10
1.2
°
f = 1 MHZ
1.6
V
GS
SHORTED
= 0 V
2.0
100
1000
100
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
7.2A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
5
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
10
1
BY R
15
DS(on)
V
V
DS
DS
= 32V
= 20V
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20
10
25
10us
100us
1ms
10ms
100
30