STD15NF10T4 STMicroelectronics, STD15NF10T4 Datasheet

MOSFET N-CH 100V 23A DPAK

STD15NF10T4

Manufacturer Part Number
STD15NF10T4
Description
MOSFET N-CH 100V 23A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD15NF10T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
870pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7958-2
STD15NF10T4

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Features
Application
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
Table 1.
November 2008
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Switching applications
STD15NF10
STD15NF10T4
Type
Order code
Device summary
V
100 V
DSSS
R
< 0.065 Ω
DS(on)
low gate charge STripFET™ II Power MOSFET
D15NF10
Marking
max
23 A
N-channel 100 V, 0.060 Ω, 23 A, DPAK
I
D
Rev 6
Figure 1.
Package
DPAK
Internal schematic diagram
DPAK
STD15NF10
1
3
Tape and reel
Packaging
www.st.com
1/13
13

Related parts for STD15NF10T4

STD15NF10T4 Summary of contents

Page 1

... DC-DC converters for telecom and computer applications also intended for any applications with low gate drive requirements. Table 1. Device summary Order code STD15NF10T4 November 2008 N-channel 100 V, 0.060 Ω DPAK low gate charge STripFET™ II Power MOSFET max Figure 1 ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD15NF10 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE (1) Table 4. On Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STD15NF10 Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/13 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STD15NF10 ...

Page 7

STD15NF10 Figure 8. Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs. temperature 7/13 ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. ...

Page 9

STD15NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...

Page 10

Package mechanical data DIM 10/13 TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 ...

Page 11

STD15NF10 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 ...

Page 12

Revision history 6 Revision history Table 8. Revision history Date 21-Jun-2004 09-Sep-2004 08-Aug-2006 04-Nov-2008 12/13 Revision 3 No history because migration. 4 Complete document 5 New template, updated SOA Table max value in G STD15NF10 Changes has ...

Page 13

... STD15NF10 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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