STD15NF10T4 STMicroelectronics, STD15NF10T4 Datasheet - Page 4

• Manufacturer Part Number: STD15NF10T4
• Description: MOSFET N-CH 100V 23A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD15NF10T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7958-2; STD15NF10T4

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
1.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On
Dynamic
Switching times
DS
(1)
= 0)
/off states
Parameter
Parameter
Parameter
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
R
Figure 13 on page 8
D
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 250 µA, V
= 4.7 Ω, V
= V
= Max rating
= Max rating,@ 125 °C
= ± 20 V
= 10 V, I
= 25 V, f = 1 MHz,
= 0
= 10 V
= 15 V
= 80 V, I
= 50 V, I
Test conditions
Test conditions
Test conditions
GS
, I
,
D
I
D
D
D
D
= 250 µA
GS
GS
= 12 A
= 7.5 A
= 24 A
= 12 A,
= 10 V
= 0
Min.
Min.
Min.
100
2
Typ.
Typ.
0.06
870
125
Typ.
12
50
30
10
60
45
49
17
6
3
Max.
0.065
STD15NF10
Max.
±100
Max.
40
10
1
4
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
ns
ns
ns
ns
S
V
V
Ω