SI4410DYTRPBF International Rectifier, SI4410DYTRPBF Datasheet - Page 2

• Manufacturer Part Number: SI4410DYTRPBF
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4410DYTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 44 ns
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 7.7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4410DYPBFTR; SI4410DYTRPBF; SI4410DYTRPBFTR

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

‚
ƒ
Notes:
V
∆V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
R
I
GSS
d(on)
r
d(off)
f
S
SM
rr
DSS
fs
(BR)DSS
GS(th)
SD
iss
oss
rss
g
gs
gd
DS(on)
2
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤
When mounted on FR4 Board, t ≤10 sec
(BR)DSS
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Diode Conduction)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
ƒ
J
= 25°C (unless otherwise specified)
„
…
R
I
Min. Typ. Max. Units
Starting T
T
Min. Typ. Max. Units
––– 0.029 –––
––– 0.010 0.0135
––– 0.015 0.020
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1585 –––
–––
–––
–––
–––
SD
1.0
30
G
J
≤ 150°C
= 25Ω, I
≤
–––
–––
–––
–––
––– -100
–––
739
106
5.4
6.5
7.7
0.7
35
30
11
38
44
50
A, di/dt ≤ 130A/µs, V
J
= 25°C, L = 8.0mH
AS
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
1.0
50
1.1
2.3
25
45
80
= 10A. (See Figure 15)
V/°C
nC
pF
ns
V
Ω
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 9
MOSFET symbol
integral reverse
p-n junction diode.
T
T
D
D
J
J
DD
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 10A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 25Ω,
≤ V
= V
= 15V, I
= 30V, V
= 30V, V
= 15V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= -20V
= 20V
= 10V, See Fig. 10 ‚
= 25V
= 0V
(BR)DSS
GS
Conditions
showing the
, I
D
S
F
D
D
D
Conditions
D
= 250µA
GS
GS
‚
= 2.3A, V
= 2.3A
= 250µA
= 10A
= 10A ‚
,
= 5.0A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
‚
= 55°C
= 0V ‚
G
S
D