IRF7842TRPBF International Rectifier, IRF7842TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7842TRPBF
• Description: MOSFET N-CH 40V 18A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7842TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4500pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.9 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7842PBFTR

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1000.0
100.0
1000
Fig 3. Typical Transfer Characteristics
10.0
Fig 1. Typical Output Characteristics
100
0.1
1.0
0.1
10
1
0.1
1.5
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.0
1
2.5
V DS = 25V
≤ 60µs PULSE WIDTH
2.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
T J = 25°C
3.0
10
TOP
BOTTOM
3.5
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
100
4.0
2.0
1.5
1.0
0.5
Fig 2. Typical Output Characteristics
1000
100
10
-60 -40 -20
Fig 4. Normalized On-Resistance
1
0.1
I D = 18A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Vs. Temperature
0
IRF7842PbF
20
1
2.5V
40
≤ 60µs PULSE WIDTH
Tj = 150°C
60
80 100 120 140 160
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
3
100