IRF7842TRPBF International Rectifier, IRF7842TRPBF Datasheet - Page 3
![MOSFET N-CH 40V 18A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7842TRPBF
Manufacturer Part Number
IRF7842TRPBF
Description
MOSFET N-CH 40V 18A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7842TRPBF.pdf
(9 pages)
Specifications of IRF7842TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
4500pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.9 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
18 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7842PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7842TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
1000.0
100.0
1000
Fig 3. Typical Transfer Characteristics
10.0
Fig 1. Typical Output Characteristics
100
0.1
1.0
0.1
10
1
0.1
1.5
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.0
1
2.5
V DS = 25V
≤ 60µs PULSE WIDTH
2.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
T J = 25°C
3.0
10
TOP
BOTTOM
3.5
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
100
4.0
2.0
1.5
1.0
0.5
Fig 2. Typical Output Characteristics
1000
100
10
-60 -40 -20
Fig 4. Normalized On-Resistance
1
0.1
I D = 18A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Vs. Temperature
0
IRF7842PbF
20
1
2.5V
40
≤ 60µs PULSE WIDTH
Tj = 150°C
60
80 100 120 140 160
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
3
100