IRF7842TRPBF International Rectifier, IRF7842TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7842TRPBF
• Description: MOSFET N-CH 40V 18A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7842TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4500pF @ 20V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.9 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7842PBFTR

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Fig 16. Gate Charge Test Circuit
+
-
12V
V
GS
Same Type as D.U.T.
D.U.T
Current Regulator
.2µF
50KΩ
3mA
ƒ
Fig 15.
+
-
Current Sampling Resistors
•
•
•
•
.3µF
SD
I
G
•
•
•
D.U.T.
I
-
D
„
G
HEXFET
+
+
-
V
DS
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Vgs(th)
Qgs1 Qgs2
Vds
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 17. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Qgd
Body Diode Forward
Diode Recovery
Current
IRF7842PbF
dv/dt
Forward Drop
di/dt
Qgodr
D =
Period
P.W.
Vgs
V
V
I
SD
GS
DD
=10V
7
Id