IRF7842TRPBF International Rectifier, IRF7842TRPBF Datasheet - Page 7
![MOSFET N-CH 40V 18A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7842TRPBF
Manufacturer Part Number
IRF7842TRPBF
Description
MOSFET N-CH 40V 18A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7842TRPBF.pdf
(9 pages)
Specifications of IRF7842TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
4500pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.9 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
18 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7842PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7842TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 16. Gate Charge Test Circuit
+
-
12V
V
GS
Same Type as D.U.T.
D.U.T
Current Regulator
.2µF
50KΩ
3mA
Fig 15.
+
-
Current Sampling Resistors
•
•
•
•
.3µF
SD
I
G
•
•
•
D.U.T.
I
-
D
G
HEXFET
+
+
-
V
DS
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Vgs(th)
Qgs1 Qgs2
Vds
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 17. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Qgd
Body Diode Forward
Diode Recovery
Current
IRF7842PbF
dv/dt
Forward Drop
di/dt
Qgodr
D =
Period
P.W.
Vgs
V
V
I
SD
GS
DD
=10V
7
Id