STS25NH3LL STMicroelectronics, STS25NH3LL Datasheet

MOSFET N-CH 30V 25A 8-SOIC

STS25NH3LL

Manufacturer Part Number
STS25NH3LL
Description
MOSFET N-CH 30V 25A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS25NH3LL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 4.5V
Input Capacitance (ciss) @ Vds
4450pF @ 25V
Power - Max
3.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2474-2

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Features
1. This value is rated according to Rthj-pcb
Applications
Description
This device utilizes the advanced design rules of
ST's proprietary STripFET™ technology. The
innovative process coupled with unique
metallization techniques makes it possible to
produce the most advanced low voltage Power
MOSFET in an SO-8 package. The device is
therefore suitable for demanding DC-DC
converter applications where high efficiency at
high output current is needed.
Table 1.
November 2007
STS25NH3LL
Optimal R
Conduction losses reduced
Switching losses reduced
Switching applications
Type
STS25NH3LL
Order code
Device summary
DS(on)
x Qg trade off @ 4.5 V
STripFET™ III Power MOSFET for DC/DC conversion
V
30 V
DSS
<0.0035 Ω 25 A
R
DS(on)
Marking
25H3LL
N-channel 30 V - 0.0032 Ω - 25 A - SO-8
I
D
(1)
Rev 10
Figure 1.
Package
SO-8
Internal schematic diagram
STS25NH3LL
SO-8
Packaging
Tape & reel
www.st.com
1/11
11

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STS25NH3LL Summary of contents

Page 1

... DC-DC converter applications where high efficiency at high output current is needed. Table 1. Device summary Order code STS25NH3LL November 2007 N-channel 0.0032 Ω SO DS(on) D <0.0035 Ω (1) Figure 1. Marking 25H3LL Rev 10 STS25NH3LL SO-8 Internal schematic diagram Package Packaging SO-8 Tape & reel 1/11 www.st.com 11 ...

Page 2

... Symbol Not-repetitive avalanche current (pulse I AV width limited by Tj max.) Single pulse avalanche energy (starting °C, I 2/11 Parameter = °C C =100 ° °C C Parameter Parameter = STS25NH3LL Value Unit 30 V ± 100 A 3.2 W Value Unit 47 °C/W -55 to 175 °C Value Unit 12.5 A 1.3 J ...

Page 3

... STS25NH3LL 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 6. Dynamic Symbol (1) Forward transconductance ...

Page 4

... RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% 4/11 Parameter Test conditions 4.7 Ω Figure 13 Parameter Test conditions di/dt = 100 A/µ Figure 18 STS25NH3LL Min. Typ. Max 12 Min Typ. Max 25 100 = 0 1 150 °C J 2.1 Unit ...

Page 5

... STS25NH3LL 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized B VDSS Figure 3. Figure 5. vs temperature Figure 7. Electrical characteristics Thermal impedance Transfer characteristics Static drain-source on resistance 5/11 ...

Page 6

... Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics 6/11 Capacitance variations Figure 11. Normalized on resistance vs temperature STS25NH3LL ...

Page 7

... STS25NH3LL 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform ...

Page 8

... These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 8/11 www.st.com STS25NH3LL ...

Page 9

... STS25NH3LL DIM SO-8 MECHANICAL DATA mm. MIN. TYP MAX. 1.75 0.1 0.25 1.65 0.65 0.85 0.35 0.48 0.19 0.25 0.25 0.5 45 (typ.) 4.8 5.0 5.8 6.2 1.27 3.81 3.8 4.0 0.4 1.27 0.6 8 (max.) Package mechanical data inch MIN. TYP. MAX. 0.068 ...

Page 10

... Revision history 5 Revision history Table 9. Document revision history Date 19-Nov-2007 10/11 Revision 10 Document status promoted from preliminary data to datasheet STS25NH3LL Changes ...

Page 11

... STS25NH3LL Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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