STS25NH3LL STMicroelectronics, STS25NH3LL Datasheet - Page 3

• Manufacturer Part Number: STS25NH3LL
• Description: MOSFET N-CH 30V 25A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS25NH3LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4450pF @ 25V
• Power - Max: 3.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2474-2

STS25NH3LL
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. Q
V
Symbol
Q
Symbol
R
CASE
V
(BR)DSS
g
OSS
C
I
I
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
fs
Q
oss
OSS
rss
iss
gs
gd
G
g
(1)
(2)
=25°C unless otherwise specified)
= C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
oss
On/off states
Dynamic
DS
* ∆ V
= 0)
in
Parameter
Parameter
, C
GS
oss
= 0)
= C
gd
+ C
ds
I
V
V
V
V
V
V
V
V
V
V
V
Figure 14
V
f = 1 MHz, gate DC bias =0
test signal level = 20 mV
open drain
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
= 250 µA, V
= V
= 10 V, I
= 4.5 V, I
= 24 V, V
= Max rating,
= Max rating @125 °C
= ± 18 V
= 10 V, I
=25 V, f = 1 MHz,
= 0
= 4.5 V
= 15 V, I
Test conditions
Test conditions
GS
, I
D
D
D
D
D
GS
= 12.5 A
= 250 µA
= 12.5 A
GS
= 12.5 A
= 25 A
= 0
= 0
Min.
Min.
Electrical characteristics
30
1
1
0.0032
0.004
Typ.
4450
Typ.
12.5
655
30
50
30
10
23
2
0.0035
0.005
Max.
Max.
±100
40
10
3
1
Unit
Unit
nC
nC
nC
nC
µA
µA
nA
pF
pF
pF
S
Ω
V
V
Ω
Ω
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