IRFU220NPBF International Rectifier, IRFU220NPBF Datasheet

MOSFET N-CH 200V 5A I-PAK

IRFU220NPBF

Manufacturer Part Number
IRFU220NPBF
Description
MOSFET N-CH 200V 5A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRFU220NPBF.pdf (11 pages)
2.IRFU220NPBF.pdf (4 pages)

Specifications of IRFU220NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Channel Type
N
Current, Drain
5 A
Gate Charge, Total
15 nC
Package Type
I-Pak (TO-251AA)
Polarization
N-Channel
Power Dissipation
43 W
Resistance, Drain To Source On
0.6 Ohm
Resistance, Thermal, Junction To Case
3.5 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
6.4 ns
Transconductance, Forward
2.6 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5 A
Mounting Style
SMD/SMT
Gate Charge Qg
15 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFU220NPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRFU220NPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IRFU220NPBF
0
Company:
H&T Electronics H&T Electronics
Part Number:
IRFU220NPBF
Quantity:
18 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRFU220NPBF
Quantity:
20 500
l
l
Typical SMPS Topologies
l
www.irf.com
l
l
l
Absolute Maximum Ratings
Applications
Notes  through … are on page 10
Benefits
I
I
I
P
V
dv/dt
T
T
D
D
DM
J
STG
D
GS
@ T
@ T
Effective C
App. Note AN1001)
Lead-Free
and Current
@T
High frequency DC-DC converters
Telecom 48V input Forward Converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
C
C
C
= 25°C
= 100°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
to Simplify Design, (See
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
200V
DSS
300 (1.6mm from case )
R
IRFR22ON
DS(on)
HEXFET Power MOSFET
D-Pak
-55 to + 175
Max.
0.71
± 20
5.0
3.5
7.5
20
43
600
max (mΩ)
IRFR220NPbF
IRFU220NPbF
IRFU220N
I-Pak
Units
W/°C
5.0A
12/10/04
V/ns
I
°C
W
A
V
D
1

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IRFU220NPBF Summary of contents

Page 1

... Telecom 48V input Forward Converters l Notes  through … are on page 10 www.irf.com SMPS MOSFET HEXFET Power MOSFET V R DSS DS(on) 200V D-Pak IRFR22ON @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) IRFR220NPbF IRFU220NPbF max (mΩ 600 5.0A I-Pak IRFU220N Max. Units 5.0 3 0.71 W/°C ± ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 10 5.0V BOTTOM 4.5V 1 4.5V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ...

Page 4

0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss Crss 10 1 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • • • ...

Page 8

EXAMPLE: T HIS IS AN IRF R120 WIT H ASSEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE ASS EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" OR INT ERNATIONAL 8 INT ...

Page 9

E XAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLE 19, 1999 MBLY LINE "A" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 10

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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