IRFU220NPBF International Rectifier, IRFU220NPBF Datasheet

IRFU220NPBF

Manufacturer Part Number

IRFU220NPBF

Description

MOSFET N-CH 200V 5A I-PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFU220NPBF.pdf (11 pages)

2.IRFU220NPBF.pdf (4 pages)

Specifications of IRFU220NPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

600 mOhm @ 2.9A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

23nC @ 10V

Input Capacitance (ciss) @ Vds

300pF @ 25V

Power - Max

43W

Mounting Type

Through Hole

Package / Case

IPak, TO-251, DPak, VPak (3 straight leads + tab)

Channel Type

Current, Drain

5 A

Gate Charge, Total

15 nC

Package Type

I-Pak (TO-251AA)

Polarization

N-Channel

Power Dissipation

43 W

Resistance, Drain To Source On

0.6 Ohm

Resistance, Thermal, Junction To Case

3.5 °C/W

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

20 ns

Time, Turn-on Delay

6.4 ns

Transconductance, Forward

2.6 S

Voltage, Breakdown, Drain To Source

200 V

Voltage, Drain To Source

200 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

5 A

Mounting Style

SMD/SMT

Gate Charge Qg

15 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFU220NPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFU220NPBF

Manufacturer:

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFU220NPBF

Company:

H&T Electronics

Part Number:

IRFU220NPBF

Quantity:

18 000

Company:

H&T Electronics

Part Number:

IRFU220NPBF

Quantity:

20 500

Current page: 1 of 4
Download datasheet (334Kb)

Typical SMPS Topologies

Absolute Maximum Ratings

Applications

Notes through … are on page 10

Benefits

dv/dt

STG

@ T

Effective C

App. Note AN1001)

Lead-Free

and Current

High frequency DC-DC converters

Telecom 48V input Forward Converters

Low Gate to Drain Charge to Reduce

Fully Characterized Capacitance Including

Fully Characterized Avalanche Voltage

Switching Losses

= 25°C

= 100°C

= 25°C

OSS

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

to Simplify Design, (See

Parameter

SMPS MOSFET

@ 10V

200V

DSS

300 (1.6mm from case )

IRFR22ON

DS(on)

HEXFET Power MOSFET

D-Pak

-55 to + 175

Max.

0.71

± 20

5.0

3.5

7.5

600

max (mΩ)

IRFR220NPbF

IRFU220NPbF

IRFU220N

I-Pak

Units

W/°C

5.0A

V/ns

°C

Related parts for IRFU220NPBF

IRFU220NPBF Summary of contents

Page 1

... Telecom 48V input Forward Converters l Notes through … are on page 10 SMPS MOSFET HEXFET Power MOSFET V R DSS DS(on) 200V D-Pak IRFR22ON @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) IRFR220NPbF IRFU220NPbF max (mΩ 600 5.0A I-Pak IRFU220N Max. Units 5.0 3 0.71 W/°C ± ...

Page 2

...

Page 3

E XAMPLE: T HIS IS AN IRFU120 INT ERNAT IONAL WIT H AS SEMBLY RE CT IFIER LOT CODE 5678 LOGO ASS EMBLE 19, 1999 MBLY LINE "A" ASSE MBLY Note: "P" ...

Page 4

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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