IRF6626 International Rectifier, IRF6626 Datasheet - Page 3

• Manufacturer Part Number: IRF6626
• Description: MOSFET N-CH 30V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6626

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2380pF @ 15V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 4.5 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6626TR

†
‡
ˆ
board (still air).
Notes:
Absolute Maximum Ratings
P
P
P
T
T
T
Thermal Resistance
R
R
R
R
R
† Surface mounted on 1 in. square Cu
www.irf.com
P
J
STG
D
D
D
θJA
θJA
θJA
θJC
θJ-PCB
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
@T
@T
@T
A
A
C
= 25°C
= 70°C
= 25°C
0.001
0.01
100
0.1
10
1
1E-006
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.02
0.20
0.10
0.05
0.01
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
kl
k
il
jl
gÃ
l
Parameter
Parameter
τ
J
t 1 , Rectangular Pulse Duration (sec)
τ
J
τ
0.001
1
Ci= τi/Ri
τ
‡
1
Ci τi/Ri
R
1
R
1
‰
Š
τ
T
R
2
0.01
R
τ
C
θ
2
2
R
measured with thermocouple incontact with top (Drain) of part.
is measured at
2
R
τ
3
3
R
τ
3
3
0.1
τ
R
4
τ
4
R
4
4
J
Typ.
12.5
–––
–––
1.0
20
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
5
τ
5
R
5
-40 to + 150
5
τ
1
A
Max.
0.017
τ
footprint full size board with
metalized back and with small
clip heatsink (still air)
270
2.2
1.4
ˆ Mounted on minimum
42
Ri (°C/W)
0.6677
1.0463
1.5612
29.2822
25.4550
Max.
–––
–––
–––
3.0
58
10
0.000066
0.000896
0.004386
0.686180
32
τi (sec)
IRF6626
100
Units
Units
°C/W
W/°C
°C
W
3