IRF6626 International Rectifier, IRF6626 Datasheet - Page 4

• Manufacturer Part Number: IRF6626
• Description: MOSFET N-CH 30V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6626

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2380pF @ 15V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 4.5 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6626TR

IRF6626
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
100000
10000
1000
1000
1000
100
100
0.1
0.1
100
Fig 6. Typical Transfer Characteristics
10
10
Fig 4. Typical Output Characteristics
1
1
0.1
1
1
V DS = 15V
≤ 60µs PULSE WIDTH
T J = 150°C
T J = 25°C
T J = -40°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5V
1
2
C iss
C oss
C rss
10
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
3
TOP
BOTTOM
100
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
100
4
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
10
1.5
1.0
0.5
25
20
15
10
1
Fig 5. Typical Output Characteristics
5
0
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 16A
T J = 25°C
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
20
1
2.5V
I D , Drain Current (A)
VGS = 4.5V
40
≤ 60µs PULSE WIDTH
Tj = 150°C
10
60
TOP
BOTTOM
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
100
V GS = 10
80
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VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
100