STB40NF10LT4 STMicroelectronics, STB40NF10LT4 Datasheet - Page 4

• Manufacturer Part Number: STB40NF10LT4
• Description: MOSFET N-CH 100V 40A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STB40NF10LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2300pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.033 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 40 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.033Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3736-2

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= Max rating
= Max rating,
= ± 20V
= V
= 10V, I
= 5V, I
= 15V
= 25V, f = 1MHz,
= 0
= 50V, I
= 80V, I
= 4.5V, R
Figure
Figure
GS
,
, I
D
I
D
13)
14)
D
GS
D
D
D
= 20A
GS
G
= 20A
= 20A
= 20A
= 40A,
= 250µA
= 4.5V
= 4.7Ω
=0
Min.
Min.
100
1
0.028
0.030
2300
Typ.
Typ.
290
125
1.7
25
25
82
64
24
46
12
22
0.033
0.036
Max.
STB40NF10L
Max.
±100
2.5
64
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω
Ω