STB40NF10LT4 STMicroelectronics, STB40NF10LT4 Datasheet - Page 6
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STB40NF10LT4
Manufacturer Part Number
STB40NF10LT4
Description
MOSFET N-CH 100V 40A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet
1.STB40NF10LT4.pdf
(13 pages)
Specifications of STB40NF10LT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
33 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
64nC @ 4.5V
Input Capacitance (ciss) @ Vds
2300pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.033 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
40 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.033Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±15V
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3736-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
2.1
6/13
Figure 1.
Figure 3.
Figure 5.
Safe operating area
Output characterisics
Transconductance
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Thermal impedance
Transfer characteristics
Static drain-source on resistance
STB40NF10L