IRF6623TR1PBF International Rectifier, IRF6623TR1PBF Datasheet

IRF6623TR1PBF

Manufacturer Part Number

IRF6623TR1PBF

Description

MOSFET N-CH 20V 16A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6623TR1PBF.pdf (9 pages)

Specifications of IRF6623TR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5.7 mOhm @ 15A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 4.5V

Input Capacitance (ciss) @ Vds

1360pF @ 10V

Power - Max

1.4W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric ST

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

9.7 mOhms

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

16 A

Power Dissipation

42 W

Gate Charge Qg

11 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6623TR1PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6623TR1PBF

Manufacturer:

International Rectifier

Quantity:

30 666

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6623TR1PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 9
Download datasheet (238Kb)

Notes through Š are on page 2

Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

Description

The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

ing to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The

DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and

vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-

turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power

systems, improving previous best thermal resistance by 80%.

The IRF6623PbF balances both low resistance and low charge along with ultra low package inductance to reduce both

conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that

power the latest generation of processors operating at higher frequencies. The IRF6623PbF has been optimized for param-

eters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to

minimize losses in the control FET socket.

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

STG

θJA

θJC

θJ-PCB

Lead-Free (Qualified up to 260°C Reflow)

Application Specific MOSFETs

Ideal for CPU Core DC-DC Converters

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible ‰

Compatible with existing Surface Mount Techniques ‰

RoHS Compliant ‰

@ T

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

Ã™

™

Parameter

@ 10V

Ãf

20V

DSS

DirectFET™ Power MOSFET Š

Typ.

12.5

–––

1.0

9.7mΩ@V

5.7mΩ@V

IRF6623TRPbF

-40 to + 150

DS(on)

Max.

0.017

120

±20

1.4

2.1

IRF6623PbF

max

Max.

= 4.5V

= 10V

–––

3.0

DirectFET™ ISOMETRIC

Qg(typ.)

11nC

Units

W/°C

°C/W

packag-

°C

5/3/06

Related parts for IRF6623TR1PBF

IRF6623TR1PBF Summary of contents

Page 1

RoHS Compliant ‰ l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible ‰ l ...

Page 2

IRF6623PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

Page 4

IRF6623PbF 1000.0 100 150°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125° 25°C 4 2.0 4.0 6 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V GS 0.01 ...

Page 6

IRF6623PbF D.U.T + ƒ • • - • + ‚ - R • • • • Fig 17. DirectFET™ Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding ...

Page 7

DirectFET™ Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking www.irf.com IRF6623PbF DIMENSIONS IMPERIAL METRIC ...

Page 8

... IRF6623PbF DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7" reel, order IRF6623TR1PBF CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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