IRF6623TR1PBF International Rectifier, IRF6623TR1PBF Datasheet - Page 5

• Manufacturer Part Number: IRF6623TR1PBF
• Description: MOSFET N-CH 20V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6623TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1360pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.7 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 42 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6623TR1PBFTR

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance Vs. Gate Voltage
20
16
12
Fig 15a. Switching Time Test Circuit
8
4
Fig 16a. Gate Charge Test Circuit
2.0
R G
20V
V
V DS
GS
V GS , Gate-to-Source Voltage (V)
t p
Duty Factor < 0.1%
4.0
Pulse Width < 1µs
V
1K
GS
I AS
D.U.T
0.01 Ω
L
V
DS
6.0
T J = 25°C
T J = 125°C
DUT
D.U.T
15V
L
8.0
D
DRIVER
I D = 15A
V
DD
L
+
-
+
-
V DD
10.0
A
VCC
Fig 13. Maximum Avalanche Energy Vs. Drain Current
90%
Fig 14b. Unclamped Inductive Waveforms
V
10%
V
DS
Fig 15b. Switching Time Waveforms
GS
I
Fig 16b. Gate Charge Waveform
AS
Vgs(th)
Qgs1 Qgs2
200
160
120
Vds
80
40
0
25
t
d(on)
Starting T J , Junction Temperature (°C)
t
r
Qgd
50
t p
IRF6623PbF
75
Qgodr
t
d(off)
V
100
t
f
(BR)DSS
TOP
BOTTOM
Vgs
125
Id
7.9A
5.2A
12A
I D
5
150