IRF9Z24NPBF International Rectifier, IRF9Z24NPBF Datasheet - Page 6
![MOSFET P-CH 55V 12A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9Z24NPBF
Manufacturer Part Number
IRF9Z24NPBF
Description
MOSFET P-CH 55V 12A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF9Z24NPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
175 mOhm @ 7.2A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.175Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
12A
Power Dissipation
45W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Channel Type
P
Current, Drain
-12 A
Gate Charge, Total
19 nC
Polarization
P-Channel
Resistance, Drain To Source On
0.175 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
23 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
2.5 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Drain To Source
–55 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 12 A
Mounting Style
Through Hole
Gate Charge Qg
12.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF9Z24NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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6
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