IRF9Z24NPBF International Rectifier, IRF9Z24NPBF Datasheet - Page 8

• Manufacturer Part Number: IRF9Z24NPBF
• Description: MOSFET P-CH 55V 12A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF9Z24NPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.175Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 12A
• Power Dissipation: 45W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Channel Type: P
• Current, Drain: -12 A
• Gate Charge, Total: 19 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 0.175 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 2.5 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 12 A
• Mounting Style: Through Hole
• Gate Charge Qg: 12.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF9Z24NPBF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
8
Dimensions are shown in millimeters (inches)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
14.09 (.555)
13.47 (.530)
15.24 (.600)
14.84 (.584)
E XAMPL E :
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
Note: "P" in assembly line
position indicates "Lead-Free"
T HIS IS AN IR F 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB LY L INE "C"
10.54 (.415)
10.29 (.405)
1
2
3
4
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
4.06 (.160)
3.55 (.140)
MIN
3.78 (.149)
3.54 (.139)
M
- A -
B A M
Visit us at www.irf.com for sales contact information.02/04
Data and specifications subject to change without notice.
INT E R NAT IONAL
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
R E CT IF IE R
AS S E MB L Y
LOT CODE
L OGO
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
TAC Fax: [phone]
PAR T NU MB E R
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
www.irf.com