IRFZ46NPBF International Rectifier, IRFZ46NPBF Datasheet - Page 5

MOSFET N-CH 55V 53A TO-220AB

IRFZ46NPBF

Manufacturer Part Number
IRFZ46NPBF
Description
MOSFET N-CH 55V 53A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFZ46NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16.5 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
53A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
1696pF @ 25V
Power - Max
107W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
53 A
Gate Charge, Total
72 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
107 W
Resistance, Drain To Source On
16.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
52 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0165Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
53A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
46 A
Mounting Style
Through Hole
Gate Charge Qg
48 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ46NPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ46NPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFZ46NPBF
Quantity:
9 000
Company:
Part Number:
IRFZ46NPBF
Quantity:
1 000
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0.01
0.1
60
50
40
30
20
10
0.00001
10
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
V
90%
10%
V
DS
GS
0.01
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
≤ 0.1 %
J
≤ 1
DM
x Z
1
0.1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
1

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