IRFZ46NPBF International Rectifier, IRFZ46NPBF Datasheet

IRFZ46NPBF

Manufacturer Part Number

IRFZ46NPBF

Description

MOSFET N-CH 55V 53A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRFZ46NPBF.pdf (8 pages)

2.IRFZ46NPBF.pdf (3 pages)

Specifications of IRFZ46NPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

16.5 mOhm @ 28A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

53A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

72nC @ 10V

Input Capacitance (ciss) @ Vds

1696pF @ 25V

Power - Max

107W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current, Drain

53 A

Gate Charge, Total

72 nC

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

107 W

Resistance, Drain To Source On

16.5 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

52 ns

Time, Turn-on Delay

14 ns

Transconductance, Forward

19 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.0165Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±20V

Drain Current (max)

53A

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

46 A

Mounting Style

Through Hole

Gate Charge Qg

48 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFZ46NPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ46NPBF

Manufacturer:

INTERNATIONAL RECTIFIER

Quantity:

30 000

Company:

H&T Electronics

Part Number:

IRFZ46NPBF

Quantity:

9 000

Company:

H&T Electronics

Part Number:

IRFZ46NPBF

Quantity:

1 000

Company:

H&T Electronics

Part Number:

IRFZ46NPBF

Quantity:

784

Current page: 1 of 8
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Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts.

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

www.irf.com

Description

dv/dt

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Power MOSFETs from International

Parameter

The low thermal

@ 10V

Typ.

300 (1.6mm from case )

0.50

–––

10 lbf•in (1.1N•m)

HEXFET

IRFZ46NPbF

-55 to + 175

TO-220AB

Max.

0.71

± 20

180

107

5.0

53‡

DS(on)

Power MOSFET

Max.

–––

1.4

DSS

= 53A

= 16.5mΩ

PD - 94952A

= 55V

‡

Units

W/°C

°C/W

V/ns

°C

09/30/10

Related parts for IRFZ46NPBF

IRFZ46NPBF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS ƒ Typ 94952A IRFZ46NPbF ® HEXFET Power MOSFET 55V DSS R = 16.5mΩ DS(on 53A ‡ TO-220AB Max. Units 53‡ 180 107 W 0 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

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IRFZ46NPBF International Rectifier, IRFZ46NPBF Datasheet

IRFZ46NPBF

Specifications of IRFZ46NPBF

Available stocks

Related parts for IRFZ46NPBF

IRFZ46NPBF Summary of contents

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