IRLU3636PBF International Rectifier, IRLU3636PBF Datasheet - Page 3

MOSFET N-CH 60V 50A IPAK

IRLU3636PBF

Manufacturer Part Number
IRLU3636PBF
Description
MOSFET N-CH 60V 50A IPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLU3636PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mohm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
49nC @ 4.5V
Input Capacitance (ciss) @ Vds
3779pF @ 50V
Power - Max
143W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.3 mOhms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
99 A
Power Dissipation
143 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLU3636PBF
Manufacturer:
INFINEON
Quantity:
9 000
www.irf.com
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
0.1
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3
1
C oss
≤ 60µs PULSE WIDTH
Tj = 25°C
2.7V
C rss
T J = 25°C
C iss
V DS = 25V
≤60µs PULSE WIDTH
10
4
f = 1 MHZ
10
5
TOP
BOTTOM
6
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
100
100
7
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
10
1
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 50A
I D = 50A
V GS = 10V
5
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
10
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
1
V DS = 48V
VDS= 30V
V DS = 12V
15
2.7V
≤ 60µs PULSE WIDTH
Tj = 175°C
IRLR/U3636PbF
20
25
10
30
35
100
40
3

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