IRLU3636PBF International Rectifier, IRLU3636PBF Datasheet - Page 4

• Manufacturer Part Number: IRLU3636PBF
• Description: MOSFET N-CH 60V 50A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3636PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mohm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3779pF @ 50V
• Power - Max: 143W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 99 A
• Power Dissipation: 143 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U3636PbF
4
Fig 11. Typical C
1000
100
110
100
0.8
0.6
0.4
0.2
0.0
0.1
10
90
80
70
60
50
40
30
20
10
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
1
0
0.1
25
0 5 10 15 20 25 30 35 40 45 50 55 60 65
Case Temperature
V DS, Drain-to-Source Voltage (V)
0.4
V SD , Source-to-Drain Voltage (V)
50
Forward Voltage
T J = 175°C
T C , Case Temperature (°C)
OSS
0.7
75
Limited By Package
Stored Energy
T J = 25°C
100
1
125
1.3
V GS = 0V
150
1.6
175
1.9
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
800
700
600
500
400
300
200
100
100
0.1
10
80
75
70
65
60
55
50
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
25
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
LIMITED BY PACKAGE
OPERATION IN THIS AREA LIMITED BY R DS (on)
T J , Temperature ( °C )
75
1
100
TOP
BOTTOM 50A
125
10
DC
100µsec
10msec
1msec
I D
5.69A
10.64A
150
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175
100