IRLR3705ZPBF International Rectifier, IRLR3705ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRLR3705ZPBF
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLR3705ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 5V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 89A
• Power Dissipation: 130W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLR3705ZPBF

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1000.0
100.0
1000
Fig 3. Typical Transfer Characteristics
10.0
Fig 1. Typical Output Characteristics
100
1.0
10
1
1.0
0.1
2.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
3.0
4.0
1
2.8V
T J = 25°C
V DS = 15V
5.0
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
6.0
7.0
10
TOP
BOTTOM
T J = 175°C
8.0
9.0 10.0
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
100
1000
80
60
40
20
100
10
0
1
0.1
0
TOP
BOTTOM
10
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
vs. Drain Current
20
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
1
30
V DS = 8.0V
380µs PULSE WIDTH
2.8V
40
Tj = 175°C
60µs PULSE WIDTH
50
T J = 25°C
T J = 175°C
10
60
70
3
80
100