IRLR3705ZPBF International Rectifier, IRLR3705ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRLR3705ZPBF
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLR3705ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 5V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 89A
• Power Dissipation: 130W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLR3705ZPBF

4
1000.0
5000
4000
3000
2000
1000
100.0
10.0
1.0
0.1
0
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T J = 175°C
0.4
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
0.8
T J = 25°C
Ciss
Coss
Crss
1.0
f = 1 MHZ
10
1.2
1.4
V GS = 0V
1.6
1.8
2.0
100
10000
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
1
12
10
8
6
4
2
0
1
Fig 6. Typical Gate Charge vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 42A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 44V
VDS= 28V
VDS= 11V
40
10msec
10
1msec
DC
100µsec
60
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80
100
100