IRF3710LPBF International Rectifier, IRF3710LPBF Datasheet - Page 2

• Manufacturer Part Number: IRF3710LPBF
• Description: MOSFET N-CH 100V 57A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3710LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3130pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 57 A
• Power Dissipation: 200 W
• Mounting Style: Through Hole
• Gate Charge Qg: 86.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3710LPBF

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
ƒ
„
Notes:
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
E
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
I
(BR)DSS
T
max. junction temperature. (See fig. 11).
Starting T
AS
J
≤ 175°C.
= 28A, V
≤ 28A di/d ≤ 380A/µs, V
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 0.70mH, R
GS
=10V. (See Figure 12).

Parameter
Parameter
DD
≤ V
G
(BR)DSS
= 25Ω,
J
,
= 25°C (unless otherwise specified)
‚‡
…
†
‡
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994.
This is a typical value at device destruction and represents
This is a calculated value limited to T
Uses IRF3710 data and test conditions.
operation outside rated limits.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1060…280†
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
32
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
3130 –––
0.13
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
410
670 1010
–––
–––
–––
140
4.5
12
58
45
47
7.5
72
–––
–––
–––
–––
250
100
130
–––
–––
–––
–––
–––
–––
–––
220
4.0
1.2
23
25
26
43
230
57
V/°C
mΩ
µA
nA
nC
ns
nH
mJ
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5‡
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 28A
= 28A
= 25°C, I
= 25°C, I
= 28A, L = 0.70mH
= 2.5Ω
= 0V, I
= 10V, I
= V
= 25V, I
= 100V, V
= 80V, V
= 20V
= -20V
= 80V
= 10V, See Fig. 6 and 13‡
= 50V
= 10V, See Fig. 10 „‡
= 0V
= 25V
GS
J
, I
= 175°C .
D
S
F
D
D
D
Conditions
= 250µA
Conditions
GS
= 28A
= 28A, V
=28A
= 250µA
= 28A„‡
GS
„
= 0V, T
= 0V
D
www.irf.com
„
GS
= 1mA‡
J
= 150°C
= 0V
G
G
S
„
+L
D
S
D
)
S
D