IRF3710LPBF International Rectifier, IRF3710LPBF Datasheet - Page 8

• Manufacturer Part Number: IRF3710LPBF
• Description: MOSFET N-CH 100V 57A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3710LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3130pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 57 A
• Power Dissipation: 200 W
• Mounting Style: Through Hole
• Gate Charge Qg: 86.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3710LPBF

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