STB20NK50ZT4 STMicroelectronics, STB20NK50ZT4 Datasheet - Page 10
![MOSFET N-CH 500V 17A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB20NK50ZT4
Manufacturer Part Number
STB20NK50ZT4
Description
MOSFET N-CH 500V 17A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB20NK50ZT4.pdf
(18 pages)
Specifications of STB20NK50ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
119nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
190W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
8.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4323-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Test circuits
3
10/18
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23.
Test circuits
resistive load
switching and diode recovery times
Unclamped inductive waveform
Doc ID 9118 Rev 9
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
circuit
STx20NK50Z