STB20NK50ZT4 STMicroelectronics, STB20NK50ZT4 Datasheet - Page 4
![MOSFET N-CH 500V 17A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB20NK50ZT4
Manufacturer Part Number
STB20NK50ZT4
Description
MOSFET N-CH 500V 17A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB20NK50ZT4.pdf
(18 pages)
Specifications of STB20NK50ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
119nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
190W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
8.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4323-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical ratings
4/18
Table 4.
Symbol
E
I
AR
AS
Avalanche characteristics
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj Max)
Single pulse avalanche energy
(starting T
J
=25 °C, I
Doc ID 9118 Rev 9
D
=I
Parameter
AR
, V
DD
=50 V)
Value
850
17
STx20NK50Z
Unit
mJ
A