STP85NF55 STMicroelectronics, STP85NF55 Datasheet - Page 4

• Manufacturer Part Number: STP85NF55
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP85NF55

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 120 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6744-5; STP85NF55

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
GS
Parameter
= 0)
Doc ID 8405 Rev 9
I
V
V
V
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
= 250 µA, V
V
R
Figure 14 on page 8
= V
= 10 V, I
= Max rating,
= Max rating @125 °C
= ±20 V
= 15 V, I
=25 V, f = 1 MHz,
= 0
=10 V
= 60 V, I
Test conditions
DD
Test conditions
G
=4.7 Ω, V
GS
Test conditions
= 30 V, I
, I
D
D
D
D
= 40 A
= 250 µA
GS
= 40 A
= 80 A
D
GS
= 0
= 40 A,
=10 V
Min.
Min.
Min.
55
-
-
-
2
-
0.0062 0.008
3700
Typ.
120
900
310
120
Typ.
Typ.
30
45
100
25
70
35
3
STB/I/P85NF55
Max.
Max.
150
Max.
±100
10
-
1
4
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω