STP85NF55 STMicroelectronics, STP85NF55 Datasheet - Page 6

• Manufacturer Part Number: STP85NF55
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP85NF55

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 120 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6744-5; STP85NF55

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
100
0.1
(A)
10
I
D
1
320
240
160
G
(S)
0.1
(A)
20
10
80
40
30
I
FS
D
0
0
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Transconductance
1
4
4
8
8
10
12
12
100
GC93850
16
16
V
GC93640
DS
GC93620
I
(V)
D
V
(A)
Doc ID 8405 Rev 9
DS
(V)
Figure 3.
Figure 5.
Figure 7.
10
10
R
K
DS(on)
128
192
-1
-2
256
10
(A)
(Ω)
64
6.4
6.0
I
6.3
6.2
6.1
D
0
-5
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
10
-4
2
20
10
-3
4
40
10
-2
6
60
10
-1
STB/I/P85NF55
GC93840
8
t
80
p
GC93630
(S)
GC93650
V
GS
(V)
I
D
(A)