IRFR3504Z International Rectifier, IRFR3504Z Datasheet - Page 3

• Manufacturer Part Number: IRFR3504Z
• Description: MOSFET N-CH 40V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3504Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR3504Z

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1000.0
100.0
1000
10.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
1.0
0.1
0.1
10
1
4.0
0.1
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5.0
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
6.0
4.5V
1
7.0
30µs PULSE WIDTH
Tj = 25°C
V DS = 20V
30µs PULSE WIDTH
8.0
10
9.0
10.0
100
Fig 4. Typical Forward Transconductance
1000
Fig 2. Typical Output Characteristics
100
10
60
50
40
30
20
10
1
0
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
10
Vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
20
V DS = 10V
380µs PULSE WIDTH
4.5V
30µs PULSE WIDTH
Tj = 175°C
30
T J = 175°C
10
T J = 25°C
40
3
100
50