IRFR3504Z International Rectifier, IRFR3504Z Datasheet - Page 4
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IRFR3504Z
Manufacturer Part Number
IRFR3504Z
Description
MOSFET N-CH 40V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR3504Z.pdf
(12 pages)
Specifications of IRFR3504Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1510pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR3504Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR3504Z
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFR3504Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFR3504ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFR3504ZTRPBF
Manufacturer:
International Rectifier
Quantity:
64 748
4
1000.0
100.0
2500
2000
1500
1000
10.0
500
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-toDrain Voltage (V)
V DS , Drain-to-Source Voltage (V)
0.6
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
Crss
Coss
1.0
Ciss
f = 1 MHZ
10
1.4
V GS = 0V
1.8
2.2
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
0
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 42A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 32V
VDS= 20V
VDS= 8.0V
20
10
FOR TEST CIRCUIT
SEE FIGURE 13
30
www.irf.com
100µsec
10msec
1msec
100
40
1000
50