IRF1404ZPBF International Rectifier, IRF1404ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRF1404ZPBF
• Description: MOSFET N-CH 40V 75A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1404ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 190 A
• Gate Charge, Total: 100 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 220 W
• Resistance, Drain To Source On: 2.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 36 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 170 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 190 A
• Mounting Style: Through Hole
• Gate Charge Qg: 100 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1404ZPBF

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1000
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
1000
10
100
1
10
1
0.1
4.0
V DS , Drain-to-Source Voltage (V)
5.0
V GS , Gate-to-Source Voltage (V)
T J = 25°C
6.0
1
4.5V
7.0
20µs PULSE WIDTH
Tj = 25°C
V DS = 15V
20µs PULSE WIDTH
8.0
10
T J = 175°C
9.0
10.0
100
11.0
1000
100
Fig 4. Typical Forward Transconductance
10
Fig 2. Typical Output Characteristics
200
160
120
80
40
0
0.1
0
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
Vs. Drain Current
40
1
4.5V
V DS = 15V
20µs PULSE WIDTH
T J = 175°C
80
20µs PULSE WIDTH
Tj = 175°C
T J = 25°C
10
120
3
160
100