IRF1404ZPBF International Rectifier, IRF1404ZPBF Datasheet - Page 6

MOSFET N-CH 40V 75A TO-220AB

IRF1404ZPBF

Manufacturer Part Number
IRF1404ZPBF
Description
MOSFET N-CH 40V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF1404ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
4340pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
190 A
Gate Charge, Total
100 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
220 W
Resistance, Drain To Source On
2.7 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
36 ns
Time, Turn-on Delay
18 ns
Transconductance, Forward
170 S
Voltage, Breakdown, Drain To Source
40 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
190 A
Mounting Style
Through Hole
Gate Charge Qg
100 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1404ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1404ZPBF
Manufacturer:
VISHAY
Quantity:
6 000
Part Number:
IRF1404ZPBF
Manufacturer:
IR
Quantity:
20 000
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2µF
GS
t p
t p
50KΩ
3mA
Current Sampling Resistors
I AS
D.U.T
.3µF
0.01 Ω
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage Vs. Temperature
600
500
400
300
200
100
4.0
3.0
2.0
1.0
0
Fig 12c. Maximum Avalanche Energy
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
Vs. Drain Current
T J , Temperature ( °C )
0
75
25
100
50
75
www.irf.com
125
I D = 250µA
100 125 150 175
150
175

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