STB21NM50N STMicroelectronics, STB21NM50N Datasheet - Page 15
![MOSFET N-CH 500V 18A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB21NM50N
Manufacturer Part Number
STB21NM50N
Description
MOSFET N-CH 500V 18A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21NM50N.pdf
(18 pages)
Specifications of STB21NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
18 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5783-2
STB21NM50N
STB21NM50N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21NM50N-1
Manufacturer:
STMicroelectronics
Quantity:
1 973
Company:
Part Number:
STB21NM50N-1
Manufacturer:
ST
Quantity:
12 500
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
DIM.
øP
øR
A1
b1
b2
L1
L2
A
D
E
S
b
c
e
L
19.85
15.45
14.20
4.85
2.20
0.40
3.70
3.55
4.50
MIN.
1.0
2.0
3.0
TO-247 MECHANICAL DATA
18.50
5.45
5.50
mm.
TYP
20.15
15.75
14.80
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.140
0.177
0.19
0.14
MIN.
Package mechanical data
0.214
0.728
0.216
TYP.
inch
0.102
0.055
0.094
0.134
0.793
0.620
0.582
0.143
0.216
MAX.
0.20
0.03
0.17
15/18