STB21NM50N STMicroelectronics, STB21NM50N Datasheet - Page 5

• Manufacturer Part Number: STB21NM50N
• Description: MOSFET N-CH 500V 18A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 18 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5783-2; STB21NM50N

STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt=100A/µs
V
(see
I
di/dt=100A/µs
V
(see
SD
SD
SD
DD
DD
Test conditions
= 18A, V
= 18A,
= 18A,
= 100V,
= 100V, T
Figure
Figure
17.)
17.)
GS
j
= 150°C
= 0
Electrical characteristics
Min.
Typ.
360
464
6.5
27
27
5
Max.
1.5
18
72
Unit
µC
µC
ns
ns
A
A
V
A
A
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