STV270N4F3 STMicroelectronics, STV270N4F3 Datasheet - Page 4

• Manufacturer Part Number: STV270N4F3
• Description: MOSFET N-CH 40V 270A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV270N4F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 270A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 270A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.00125ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.25 Ohms
• Forward Transconductance Gfs (max / Min): 200 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7031-2

Electrical characteristics
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Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Table 5.
1.
Table 6.
Symbol
V
Symbol
Symbol
R
V
t
t
(BR)DSS
g
d(on)
d(off)
C
I
I
C
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
t
t
oss
r
f
iss
rss
gs
gd
g
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 14089 Rev 6
V
V
V
V
Figure 14
I
V
V
V
V
D
DS
DS
DD
GS
DS
DS
DS
DS
GS
= 250 µA, V
= 10 V
= V
= 20 V, I
= 10 V, I
= Max rating,
= Max rating, T
= ± 20 V
= 10 V
= 25 V, f = 1 MHz, V
V
R
Figure 13
V
R
Figure 13
Test conditions
Test conditions
GS
DD
DD
G
G
= 4.7 Ω, V
= 4.7 Ω, V
, I
,
= 20 V, I
= 20 V, I
D
I
D
D
D
Test conditions
= 160 A,
= 250 µA
= 80 A
= 100 A
GS
= 0
D
D
c
GS
GS
=125 °C
= 80 A
= 80 A
= 10 V
= 10 V,
GS
=0
Min.
Min.
40
2
-
-
-
Min.
-
-
7500
1900
Typ.
Typ.
1.25
200
110
50
30
25
Typ.
180
110
25
45
STV270N4F3
Max.
±200
Max.
100
150
1.5
Max. Unit
10
4
-
-
Unit
Unit
mΩ
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S