STV270N4F3 STMicroelectronics, STV270N4F3 Datasheet - Page 5

• Manufacturer Part Number: STV270N4F3
• Description: MOSFET N-CH 40V 270A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV270N4F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 270A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 270A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.00125ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.25 Ohms
• Forward Transconductance Gfs (max / Min): 200 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7031-2

STV270N4F3
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
V
I
SD
I
SD
RRM
I
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Q
SD
t
rr
rr
(1)
(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 14089 Rev 6
I
I
V
Figure 15
SD
SD
DD
= 80 A, V
= 160 A,di/dt = 100 A/µs
= 32 V, T
Test conditions
GS
j
= 150 °C
= 0
Electrical characteristics
Min.
-
-
-
Typ. Max. Unit
225
3.2
70
1080
270
1.3
nC
ns
A
A
V
A
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