IRFB31N20DPBF International Rectifier, IRFB31N20DPBF Datasheet

IRFB31N20DPBF

Manufacturer Part Number

IRFB31N20DPBF

Description

MOSFET N-CH 200V 31A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFB31N20DPBF.pdf (12 pages)

2.IRFB31N20DPBF.pdf (3 pages)

Specifications of IRFB31N20DPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

82 mOhm @ 18A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

31A

Vgs(th) (max) @ Id

5.5V @ 250µA

Gate Charge (qg) @ Vgs

107nC @ 10V

Input Capacitance (ciss) @ Vds

2370pF @ 25V

Power - Max

3.1W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Channel Type

Current, Drain

31 A

Gate Charge, Total

70 nC

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

200 W

Resistance, Drain To Source On

0.082 Ohm

Resistance, Thermal, Junction To Case

0.75 °C/W

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

26 ns

Time, Turn-on Delay

16 ns

Transconductance, Forward

17 S

Voltage, Breakdown, Drain To Source

200 V

Voltage, Drain To Source

200 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±30 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

30 V

Continuous Drain Current

31 A

Mounting Style

Through Hole

Gate Charge Qg

70 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFB31N20DPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFB31N20DPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRFB31N20DPBF

Quantity:

30 000

Company:

H&T Electronics

Part Number:

IRFB31N20DPBF

Quantity:

10 000

Current page: 1 of 3
Download datasheet (345Kb)

Applications

Notes through †

dv/dt

STG

@ T

AN 1001)

and Current

High Frequency DC-DC converters

Lead-Free

Low Gate to Drain to Reduce Switching

Fully Characterized Capacitance Including

Fully Characterized Avalanche Voltage

Telecom 48V Input DC/DC Active Clamp Reset Forward Converter

Effective COSS to Simplify Design,(See

Losses

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw†

Continuous Drain Current, V

Power Dissipation ‡

Power Dissipation

are on page 11

Parameter

SMPS MOSFET

@ 10V

IRFB31N20DPbF

TO-220AB

200V

DSS

300 (1.6mm from case )

HEXFET

IRFS31N20DPbF

-55 to + 175

10 lbf•in (1.1N•m)

Max.

124

200

± 30

DS(on)

3.1

1.3

2.1

0.082Ω

Pak

Power MOSFET

max

IRFSL31N20DPbF

TO-262

Units

W/°C

31A

V/ns

°C

Related parts for IRFB31N20DPBF

IRFB31N20DPBF Summary of contents

Page 1

... Mounting torqe, 6- screw† Telecom 48V Input DC/DC Active Clamp Reset Forward Converter l Notes through † are on page 11 SMPS MOSFET HEXFET V DSS 200V TO-220AB IRFB31N20DPbF IRFS31N20DPbF @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) ® Power MOSFET ...

Page 2

...

Page 3

IRFB/S/SL31N20DPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 0.93 (.037) 3X 0.69 (.027) 1.40 (.055) 3X 1.15 ...

Related keywords

irfb3307
irfb3207
irfb3307z
irfb3306
irfb3206
irfb3077
irfb3306pbf
irfb3206pbf
irfb31n20d
irfb3006pbf
IRFB31N20DPBF datasheet
IRFB31N20DPBF data sheet
IRFB31N20DPBF pdf datasheet
IRFB31N20DPBF component
IRFB31N20DPBF part
IRFB31N20DPBF distributor
IRFB31N20DPBF RoHS
IRFB31N20DPBF datasheet download