IRFB31N20DPBF International Rectifier, IRFB31N20DPBF Datasheet
![MOSFET N-CH 200V 31A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB31N20DPBF
Manufacturer Part Number
IRFB31N20DPBF
Description
MOSFET N-CH 200V 31A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB31N20DPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
82 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
107nC @ 10V
Input Capacitance (ciss) @ Vds
2370pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
31 A
Gate Charge, Total
70 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
0.082 Ohm
Resistance, Thermal, Junction To Case
0.75 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
26 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
31 A
Mounting Style
Through Hole
Gate Charge Qg
70 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB31N20DPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB31N20DPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
Applications
Notes through
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
STG
D
D
GS
J
@ T
@ T
AN 1001)
and Current
High Frequency DC-DC converters
Lead-Free
Low Gate to Drain to Reduce Switching
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
@T
Telecom 48V Input DC/DC Active Clamp Reset Forward Converter
Effective COSS to Simplify Design,(See
Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Continuous Drain Current, V
Power Dissipation
Power Dissipation
are on page 11
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB31N20DPbF
TO-220AB
V
200V
DSS
300 (1.6mm from case )
HEXFET
IRFS31N20DPbF
-55 to + 175
10 lbf•in (1.1N•m)
R
Max.
124
200
± 30
DS(on)
3.1
1.3
2.1
31
21
D
2
0.082Ω
Pak
®
Power MOSFET
max
IRFSL31N20DPbF
TO-262
Units
W/°C
31A
V/ns
I
°C
W
A
V
D
1
Related parts for IRFB31N20DPBF
IRFB31N20DPBF Summary of contents
Page 1
... Mounting torqe, 6- screw Telecom 48V Input DC/DC Active Clamp Reset Forward Converter l Notes through are on page 11 SMPS MOSFET HEXFET V DSS 200V TO-220AB IRFB31N20DPbF IRFS31N20DPbF @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) ® Power MOSFET ...
Page 2
...
Page 3
IRFB/S/SL31N20DPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 0.93 (.037) 3X 0.69 (.027) 1.40 (.055) 3X 1.15 ...