IRFB31N20DPBF International Rectifier, IRFB31N20DPBF Datasheet - Page 3
![MOSFET N-CH 200V 31A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB31N20DPBF
Manufacturer Part Number
IRFB31N20DPBF
Description
MOSFET N-CH 200V 31A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB31N20DPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
82 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
107nC @ 10V
Input Capacitance (ciss) @ Vds
2370pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
31 A
Gate Charge, Total
70 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
0.082 Ohm
Resistance, Thermal, Junction To Case
0.75 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
26 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
31 A
Mounting Style
Through Hole
Gate Charge Qg
70 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB31N20DPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB31N20DPBF
Manufacturer:
IR
Quantity:
20 000
IRFB/S/SL31N20DPbF
Dimensions are shown in millimeters (inches)
8
E XAMPL E :
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
14.09 (.555)
13.47 (.530)
15.24 (.600)
14.84 (.584)
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
Note: "P" in assembly line
position indicates "Lead-Free"
T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
1.40 (.055)
1.15 (.045)
2X
10.54 (.415)
10.29 (.405)
1
2
3
4
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
4.06 (.160)
3.55 (.140)
MIN
3.78 (.149)
3.54 (.139)
M
- A -
B A M
INT E R NAT IONAL
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
R E CT IF IE R
AS S E MB L Y
L OT CODE
L OGO
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
PAR T NU MB E R