STV160NF03LT4 STMicroelectronics, STV160NF03LT4 Datasheet - Page 2

• Manufacturer Part Number: STV160NF03LT4
• Description: MOSFET N-CH 30V 160A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV160NF03LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 210W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0019 Ohms
• Forward Transconductance Gfs (max / Min): 210 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 160 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3252-2

STV160NF03L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
2/9
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
I
C
C
I
DS(on)
C
C
GS(th)
D(on)
C
C
fs
DSS
GSS
R
L
L
T
oss
oss
iss
rss
iss
rss
S
D
(1)
g
l
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Forward Transconductance
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Internal Source Inductance
Internal Drain Inductance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
V
Package Body) to the Die
Center
From the Lead End (6mm from
D
D
DS
DS
GS
DS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DS
DS
DS
= 80 A
= 250 µA, V
= Max Rating
= Max Rating, T
= V
= 10 V, I
> I
> I
= 0 V, f = 1 MHz, V
= 25 V, f = 1 MHz, V
= 0 V, f = 1 MHz, V
= ± 15 V
= 10 V, I
= 10 V, I
= 8 V, I
= 5 V, I
= 8 V, I
= 5 V, I
= 10V
D(on)
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
D
D
D
x R
x R
D
D
D
D
=80 A; T
=40 A; T
= 80 A
= 40 A
=80 A;T
GS
= 250µA
= 80 A
= 45 A
DS(on)max,
DS(on)max,
= 0
C
j
j
j
= 125 °C
= 175 °C
= 175 °C
= 175 °C
GS
GS
GS
= 0
= 0
= 0
Not Available on Surface Mounting
Package
Min.
Min.
Min.
160
30
1
0.71
300
50
4700
1580
6500
9500
4000
Typ.
Typ.
1.86
Typ.
210
240
1.9
0.5
2
4
4
Max.
±100
Max.
Max.
12.8
2.8
2.8
3.8
6.7
6.4
7.8
10
1
°C/W
°C/W
°C
Unit
Unit
Unit
m
m
m
m
m
m
m
nH
µA
µA
nA
pF
pF
pF
pF
pF
pF
V
V
A
S