STV160NF03LT4 STMicroelectronics, STV160NF03LT4 Datasheet - Page 3

• Manufacturer Part Number: STV160NF03LT4
• Description: MOSFET N-CH 30V 160A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV160NF03LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 210W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0019 Ohms
• Forward Transconductance Gfs (max / Min): 210 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 160 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3252-2

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
t
t
I
SD
r(Voff)
d(on)
Q
Q
d(off)
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
t
rr
gd
r
gs
c
f
f
g
rr
(2)
(1)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off-Delay Time
Fall Time
Turn-off Delay Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
I
I
V
(see test circuit, Figure 5)
V
V
R
(see test circuit, Figure 5)
Vclamp = 24 V, I
R
SD
SD
DD
G
DD
GS
DD
DD
G
G
= 4.7
= 4.7
= 4.7
= 160 A, V
= 80 A, di/dt = 100A/µs,
= 15 V, I
= 24 V, I
= 10 V
= 15 V, I
= 15V, T
Test Conditions
Test Conditions
Test Conditions
V
V
V
GS
D
D
D
j
GS
GS
= 25°C
GS
= 80 A
= 160 A,
= 80 A,
= 10V
= 10 V
D
= 10V
Thermal Impedance
= 0
= 40 A
Min.
Min.
Min.
Typ.
Typ.
Typ.
380
103
180
170
125
4.5
30
80
21
38
80
75
25
90
STV160NF03L
Max.
Max.
Max.
140
160
640
1.5
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
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