STP11NM60FDFP STMicroelectronics, STP11NM60FDFP Datasheet - Page 4

• Manufacturer Part Number: STP11NM60FDFP
• Description: MOSFET N-CH 600V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP11NM60FDFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 35000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5392-5; STP11NM60FDFP

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
G
g
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP
Parameter
Parameter
DS
= 0)
DSS
GS
.
= 0)
I
V
V
V
V
V
V
I
V
V
V
400V
f=1 MHz Gate DC Bias= 0
test signal level = 20mV
open drain
V
V
(see Figure 15)
D
D
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
GS
= 250 µA, V
= 5.5A
=Max rating, T
= Max rating
= ±30V
= V
= 10V, I
> I
= 25V, f = 1 MHz,
= 0
= 0V, V
= 10V
Test conditions
= 400V, I
Test conditions
D(on)
GS
, I
DS
D
x R
D
D
= 5.5A
GS
= 250µA
= 0V to
= 11A,
DS(on)max,
= 0
C
=125°C
Min.
Min.
600
3
Typ.
900
350
100
5.2
7.8
35
28
13
Typ.
0.40
3
4
oss
Max.
Max.
±100
40
when V
0.45
100
1
5
DS
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
S
Ω
µA
µA
nA
W
V
V