STP11NM60FDFP STMicroelectronics, STP11NM60FDFP Datasheet - Page 5

• Manufacturer Part Number: STP11NM60FDFP
• Description: MOSFET N-CH 600V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP11NM60FDFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 35000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5392-5; STP11NM60FDFP

STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP
Table 6.
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
Symbol
I
V
t
SDM
t
r(Voff)
I
I
d(on)
SD
RRM
RRM
I
Q
Q
t
t
SD
t
t
t
c
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 14)
V
R
(see Figure 16)
I
I
di/dt = 100A/µs,
(see Figure 19)
I
di/dt = 100A/µs,
Tj=150°C
(see Figure 19)
DD
DD
SD
SD
SD
G
G
= 4.7Ω V
= 4.7Ω, V
Test conditions
Test conditions
= 11A, V
= 11A, V
= 11A, V
= 250V, I
= 400V, I
GS
GS
DD
DD
D
D
GS
= 5.5A
= 10V
= 11A,
= 10V
= 0
= 50V
= 50V
Electrical characteristics
Min.
Min
1600
Typ.
Typ.
140
680
260
13
20
16
10
15
24
A
Max
Max.
1.5
11
44
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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