STW12NK95Z STMicroelectronics, STW12NK95Z Datasheet - Page 6

• Manufacturer Part Number: STW12NK95Z
• Description: MOSFET N-CH 950V 10A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW12NK95Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 950V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 950V
• On Resistance Rds(on): 0.69ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.69 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 950 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5167-5

Electrical characteristics
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Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
I
di/dt = 100A/µs,
V
SD
SD
SD
DD
DD
=8.3A, V
=10,
=10A,
Test conditions
=50V, Tj=25°C
=50V, Tj=150°C
GS
=0
Min
Typ.
21.6
728
964
78
11
23
STW12NK95Z
Max
1.6
10
40
Unit
µC
µC
ns
ns
A
A
V
A
A