IXTC180N085T IXYS, IXTC180N085T Datasheet

MOSFET N-CH 85V 110A ISOPLUS220

IXTC180N085T

Manufacturer Part Number
IXTC180N085T
Description
MOSFET N-CH 85V 110A ISOPLUS220
Manufacturer
IXYS
Datasheets

Specifications of IXTC180N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.1 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
8800pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0061 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.0061
Ciss, Typ, (pf)
8800
Qg, Typ, (nc)
170
Trr, Typ, (ns)
63
Trr, Max, (ns)
-
Pd, (w)
150
Rthjc, Max, (k/w)
1.0
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS has developed a new platform of Power
MOSFETs called TrenchMV™. TrenchMV
covers the 55V to 100V range with currents
ranging from 44A to 280A. These new devices
utilize IXYS unique Trench MOSFET
technology to provide extremely low power
dissipation with ultra-low Rds(on) and an
optimized intrinsic reverse diode. This new
platform of Power MOSFETs is a part of IXYS
growing product line aimed at low voltage
power conversion applications.
TrenchMV Power MOSFETS find use in many
applications. These devices are designed to
withstand even the most robust operating
conditions required by the automotive market,
as well as the industrial sector. Other
applications include DC/DC converters,
battery chargers, motor drives and others.
Additional Trench products and package
options are in process, including options for
lower and higher voltages.
IXYS offers a full range of standard packages
and a full range of surface mount and
discrete packages… TO-220, TO-252,
SOT-227B, etc. In addition, versions are
offered in IXYS proprietary ISOPLUS™
packages, providing UL recognized 2500V
isolation with superior thermal performance.
Electrically isolated tabbed packages include
the ISOPLUS220™, ISOPLUS i4-Pak™ and
ISOPLUS i5-Pak™.
P
TrenchMV
N E X T G E N E R AT I O N P O W E R M O S F E T s F R O M 5 5 V T O 1 0 0 V
FEBRUARY 2007
R
O
D
U
C
T
S
E
L
E
C
F E A T U R E S :
• Very low R
• High power density
• Low package inductance
• Unclamped Inductive Switching (UIS) rated
• UL recognized isolated ISOPLUS™
B E N E F I T S :
• Rugged operation
• Easy to drive and protect
• Cost-effective
• Space saving
• Easy to mount
packages
T
Power MOSFETs
O
R
DS(on)
G
U
I
D
E
ISOPLUS220™
W W W . I X Y S . C O M
TO-220
(D2-Pak)
TO-263
TO-247
P O W E R D E V I C E S
I C S A N D G A T E D R I V E R S
F U N C T I O N A L S O L U T I O N S
>>>
RF Power MOSFETs
IGBT Discretes
IGBT Modules
Ultra Fast Rectifiers
Silicon Schottky Rectifiers
GaAs Schottky Rectifiers
SCRs and Thyristors
Rectifiers Bridges
MOSFET and IGBT Gate Drivers
Half Bridge Gate Drivers
PWM Controllers
PFC Modules
Converter/Brake/Inverter Modules
Boost & Buck Power Modules
Power MOSFET Discretes
TO-252
(D-Pak)
PLUS220
PLUS220SMD
TO-3P
D2-Pak
7-Lead

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IXTC180N085T Summary of contents

Page 1

... IXYS unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low Rds(on) and an optimized intrinsic reverse diode. This new platform of Power MOSFETs is a part of IXYS growing product line aimed at low voltage power conversion applications. TrenchMV Power MOSFETS find use in many applications ...

Page 2

... TrenchMV™ Power MOSFETs in 5-lead ISOPLUS i5-Paks™ The principal feature of this subset of TrenchMV Power MOSFETs arises from the high power handling and integration capabilities found in the IXYS discrete ISOPLUS i5-Pak. Standard discrete through-hole packages (i.e. TO-247 or TO-264) are only capable of housing one die due to their inherent spatial, thermal, and structural limitations ...

Page 3

Part Number (cont) DS(on) Max DSS Max T =25°C c (V) (A) IXTP64N055T 55 64 IXTY64N055T 55 64 IXTA90N055T 55 90 IXTP90N055T 55 90 IXTA110N055T 55 110 IXTA110N055T7 55 110 IXTC110N055T 55 78 IXTP110N055T 55 110 ...

Page 4

... IXTA88N085T 85 88 IXTA88N085T7 85 88 IXTP88N085T 85 88 IXTA152N085T 85 152 IXTA152N085T7 85 152 IXTH152N085T 85 152 IXTP152N085T 85 152 IXTQ152N085T 85 152 IXTA180N085T 85 180 IXTA180N085T7 85 180 IXTC180N085T 85 110 IXTH180N085T 85 180 IXTP180N085T 85 180 IXTQ180N085T 85 180 IXTA200N085T 85 200 IXTA200N085T7 85 200 IXTC200N085T 85 110 IXTH200N085T 85 200 IXTP200N085T 85 200 IXTQ200N085T 85 200 IXTC230N085T ...

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