IXTC180N085T IXYS, IXTC180N085T Datasheet

MOSFET N-CH 85V 110A ISOPLUS220

IXTC180N085T

Manufacturer Part Number
IXTC180N085T
Description
MOSFET N-CH 85V 110A ISOPLUS220
Manufacturer
IXYS
Datasheets

Specifications of IXTC180N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.1 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
8800pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0061 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.0061
Ciss, Typ, (pf)
8800
Qg, Typ, (nc)
170
Trr, Typ, (ns)
63
Trr, Max, (ns)
-
Pd, (w)
150
Rthjc, Max, (k/w)
1.0
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
(
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION All Rights Reserved
D25
LRMS
DM
A
GSS
DSS
Electrically Isolated Back)
J
JM
stg
L
DSS
DGR
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
50/60Hz, t = 1 minute, I
Mounting Force
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
TM
GS
DSS
, I
D
, V
D
D
= 250μA
= 250μA
= 25A, Notes 1, 2
GS
DS
= 0V
= 0V
GS
ISOL
Surface)
= 1MΩ
< 1mA, RMS
T
J
= 150°C
IXTC180N085T
JM
11..65 / 2.5..14.6
85
2.0
Min.
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
2500
± 20
Typ.
110
480
150
175
300
260
1.0
85
85
75
25
2
±200 nA
Max.
250 μA
6.1 mΩ
4.0
5 μA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
V
g
J
V
I
R
ISOPLUS220
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Package
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V Electrical Isolation
175°C Operating Temperature
Avalanche Rated
Fast Intrinsic Rectifier
- DC/DC Conversion
Low R
Easy to Mount
Space Savings
High Power Density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary Switch for 24V and 48V
High Current Switching Applications
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Voltage Synchronous Recifiers
DS(on)
Systems
DSS
G
E153432
D S
DS(on)
= 85V
= 110A
≤ ≤ ≤ ≤ ≤
D = Drain
6.1mΩ Ω Ω Ω Ω
Isolated Back Surface
DS99676A(03/09)

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IXTC180N085T Summary of contents

Page 1

... GSS DSS DS DSS 10V 25A, Notes 1, 2 DS(on © 2009 IXYS CORPORATION All Rights Reserved IXTC180N085T Surface) Maximum Ratings 85 = 1MΩ ± 20 110 75 480 JM 25 1.0 150 -55 ... +175 175 -55 ... +175 300 260 < 1mA, RMS 2500 ISOL 11..65 / 2.5..14.6 ...

Page 2

... Characteristic Values Min. Typ 4.1 129 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTC180N085T ISOPLUS220 (IXTC) Outline Max 1.Gate 3.Sourc nC Note: Bottom heatsink (Pin electrically isolated from Pins 1,2, and 3. 1.0 °C/W °C/W Max. 180 ...

Page 3

... Value 175º 25ºC J 160 200 240 280 IXTC180N085T Fig. 2. Extended Output Characteristics @ 25ºC 280 V = 10V GS 9V 240 8V 200 7V 160 6V 120 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.6 ...

Page 4

... J 25ºC 140 125ºC 120 100 5.5 6.0 6 25ºC J 0.9 1.0 1.1 1.2 1.3 10.00 1.00 C iss C oss 0.10 C rss 0. 0.0001 IXTC180N085T Fig. 8. Transconductance 40ºC J 25ºC 150º 120 I - Amperes D Fig. 10. Gate Charge V = 43V 25A 10mA ...

Page 5

... I = 25A 100 160 T = 125º 140 T = 25º 120 76 100 25º 125º IXTC180N085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 5Ω 10V 43V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature I = 50A 25A d(off 5Ω 10V 43V 25A, 50A D 25 ...

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