STB18NM60N STMicroelectronics, STB18NM60N Datasheet - Page 5

• Manufacturer Part Number: STB18NM60N
• Description: MOSFET N-CH 600V 13A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB18NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 285 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 50V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10297-2

STB/F/I/P/W18NM60N
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
I
SDM
V
I
I
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
RRM
RRM
SD
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 15868 Rev 3
I
I
V
(see
V
di/dt =100 A/µs, I
Tj = 150°C (see
SD
SD
DD
DD
=13 A, di/dt =100 A/µs,
= 13 A, V
= 60 V
= 60 V
Figure
Test conditions
19)
GS
=0
Figure
SD
= 13 A
19)
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
300
360
4.0
4.5
25
25
1.6
13
52
µC
µC
ns
ns
A
A
V
A
A
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