STB18NM60N STMicroelectronics, STB18NM60N Datasheet - Page 7

• Manufacturer Part Number: STB18NM60N
• Description: MOSFET N-CH 600V 13A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB18NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 285 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 50V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10297-2

STB/F/I/P/W18NM60N
Figure 8.
Figure 10. Static drain-source on resistance
Figure 12. Capacitance variations
R
1000
DS(on)
0.20
0.26
0.22
100
0.25
0.24
0.23
(pF)
0.28
0.27
0.21
(A)
(Ω)
20
10
25
15
10
I
C
D
0
5
1
0
0.1
0
Output characteristics
V
2
GS
5
=10V
1
4
10
6
10
15
8
6V
10
100
20
12
5V
4V
V
V
DS
Doc ID 15868 Rev 3
I
DS
AM05528v1
AM05530v1
D
AM05532v1
(V)
(A)
(V)
Ciss
Coss
Crss
Figure 9.
Figure 11. Gate charge vs gate-source voltage
Figure 13. Output capacitance stored energy
V
E
(V)
(µJ)
(A)
20
15
10
12
25
10
I
GS
oss
D
0
5
6
4
2
8
0
0
4
3
2
7
6
5
1
0
0
0
V
DS
Transfer characteristics
100
2
10
V
DS
200 300
V
=15V
DD
I
4
D
=13A
20
=480V
Electrical characteristics
6
400
30
V
8
GS
500 600
40
10
Q
V
g
GS
(nC)
AM05529v1
AM05533v1
AM05531v1
V
400
500
100
0
DS
300
200
(V)
(V)
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